Top-left: False-color scanning electron microscope (SEM) image of a three-terminal Josephson junction with individually tunable QPC gates with measurement schematic. Top-right: 3D schematic of Devices 1 and 3 showing layered heterostructure. Bottom-left: Differential resistance map of a three-terminal Josephson jucntion, MAR is highlighted by cyan lines. Bottom-right: Differential resistance map of the device resistance as a function of bias current and applied out-of-plane magnetic field.

The Andreev bound state (ABS) spectra of Multi-terminal Josephson junctions (MTJJs) can form an artificial band structure in arbitrary dimensions. This ABS spectra is predicted to host topologically protected Weyl nodes and higher order Chern numbers [1,2]. The detection of these states require that the number of conductance modes hosted by the central scttering region is close to unity [3,4]. In our recent work [5], we have demonstrated the accesiblity of this regime in a three-terminal Josephson jucntion using a split-gate quantum point contact like geomtery. These devices are built upon InAs two-dimensional electron gas proximitized by epitaxial aluminum providing high interface transperancy and gate tunablity.

Multi-terminal josephson devices can act as a network of two-terminal Josephson junctions when many conductance modes are present between different legs of the multi-terminal device [5,6]. Recently, we showed that these devices can show non-reciprocal supercurrent [7], a phenomena known as Josephson diode effect [8]. This effect can have potential applications in design of dissipationless electronics. Our work showed that this effect can be realized independent of the material system used, providing a robust and scalable way to make Josepshon diode devices.

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